C10300 - SEMI C103 - Guide for Reporting Performance Parameters of the Chemical Mechanical Planarization (CMP) Conditioning Disks Used in Semiconductor Manufacturing StdPbc-0324

C10300 - SEMI C103 - Guide for Reporting Performance Parameters of the Chemical Mechanical Planarization (CMP) Conditioning Disks Used in Semiconductor Manufacturing StdPbc-0324This Guide provides measurements and reporting of the parameters of disk aggressiveness, pad surface topography, disk surface topography and changes of the geometry of the disk features that are in contact with the pad during conditioning. This Guide provides measurements and reporting of the changes of aggressiveness and surface topography during the pad conditioning. This Guide provides for optimal sequence of the conditioning tests for multiple

使用本文件是为了确保各工艺设备供应商或关键腔室部件（CCC）制造商提供的结果报告一致性。

Users should be able to calculate the COO for any gas delivery equipment using this Guide

and Operator which are considered common components

SEMI MF374

org in June 2011

24-1116 (Reapproved 0124)

org in July 2001

SEMI E87-0600 (technical revision)

and components that contain and distribute fluid

Attendees will learn about the different types classes of conductive inks available

The magnitude of the capacitance changes associated with the emission can be related to the densities of the defects present

features as small as 20 nm (peak to valley) can result in post CMP discoloration of dielectrics as a result of local thickness variation of the remaining dielectric