GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US Max. current +3 A Brand new laptop ( 4GB

Brand new laptop ( 4GB RAM 128GB SSD) with MS Windows 10 and the latest version testing software is installed and calibrated for immediate use

We don't guarantee the crimping quality if other brand cells are used

(4'' to 2'')

Surface finish (Ra) :   < 5A

Thermocouple is not included

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US Max. current +3 A Brand new laptop ( 4GBGaAs single crystal wafer, PRIME Grade Growing Method: VGF Orientation: (100) 2 degree OFF Toward [101] + 0. 5 deg Size: 2" dia x 0. 5mm Polishing: One side polished Doping: Te doped Conductor type: N type Carrier Concentration: (0. 15 2. 6) E18 cm^3 Mobility: 2700~3600 cm^2 V. S Resistivity: 9E 4~1. 1E 2 ohm cm EPD: <8000 cm^2 Note: EPI polishing: RMS < 5 Angstrom Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces