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LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2 Be Temperature Accuracy
LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2 Be Temperature Accuracy
$64.34
Description
Temperature Accuracy
Surface Polishing: two sides epi polished
0004 in 0
Cylinder Cell Assembling
Net weight: 8
LaAlO3, (100) ori 10x10x1.0 mm substrate, 2 side EPI polished - LAOa101010S2 Be Temperature AccuracyLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5
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